# Class 12 Physics Chapter 14 Case Study Question Semiconductor Electronics: Materials, Devices, and Simple Circuits PDF Download

In Class 12 Boards there will be Case studies and Passage Based Questions will be asked, So practice these types of questions. Study Rate is always there to help you. Free PDF Download of CBSE Class 12 Physics Chapter 14 Semiconductor Electronics: Materials, Devices, and Simple Circuits Case Study and Passage Based Questions with Answers were Prepared Based on Latest Exam Pattern. Students can solve NCERT Class 12 Physics Semiconductor Electronics : Materials, Devices and Simple Circuits to know their preparation level.

In CBSE Class 12 Physics Paper, Students will have to answer some questions based on Assertion and Reason. There will be a few questions based on case studies and passage-based as well. In that, a paragraph will be given, and then the MCQ questions based on it will be asked.

# Semiconductor Electronics : Materials, Devices and Simple Circuits Case Study Questions With answers

Here, we have provided case-based/passage-based questions for Class 12 Physics Chapter 14 Semiconductor Electronics : Materials, Devices and Simple Circuits

Case Study/Passage Based Questions

When the diode is forward biased, it is found that beyond forward voltage V = Vk, called knee voltage, the conductivity is very high. At this value of battery biasing for p-n junction, the potential barrier is overcome and the current increases rapidly with an increase in forwarding voltage. When the diode is reverse biased, the reverse bias voltage produces a very small current about a few microamperes which almost remains constant with bias. This small current is reverse saturation current.

In which of the following figures, the p-n diode is forward biased

Answer:(d) : All options are basic properties of nuclear forces. So, all options are correct.

Based on the V-I characteristics of the diode, we can classify diode as
(a) bi-directional device
(b) ohmic device
(c) non-ohmic device
(d) passive element

The V-I characteristic of a diode is shown in the figure. The ratio of forward to reverse bias resistance is

(a) 100 (b) 106 (c) 10 (d) 10–6

In the case of forwarding biasing of a p-n junction diode, which one of the following figures correctly depicts the direction of conventional current (indicated by an arrow mark)?

If an ideal junction diode is connected as shown, then the value of the current I is

(a) 0.013 A (b) 0.02 A
(c) 0.01 A (d) 0.1 A

Case Study/Passage Based Questions

A photodiode is an optoelectronic device in which current carriers are generated by photons
through photo-excitation i.e., photoconduction by light. It is a p-n junction fabricated from a photosensitive semiconductor and provided with a transparent window so as to allow light to fall on its junction. A photodiode can turn its current ON and OFF in nanoseconds. So, it can be used as the fastest photo-detector

The photodiode is a device
(a) that is always operated in reverse bias.
(b) which is always operated in forwarding bias.
(c) in which photocurrent is independent of the intensity of incident radiation.
(d) which may be operated in both forward or reverse bias

Answer:(a) that is always operated in reverse bias.

To detect light of wavelength 500 nm, the photodiode must be fabricated from a semiconductor of a minimum bandwidth of
(a) 1.24 eV (b) 0.62 eV
(c) 2.48 eV (d) 3.2 eV